SI1965DH-T1-E3 Detailed Description
Part Number |
SI1965DH-T1-E3 |
Part Status |
Active |
FET Type |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
1.3A |
Rds On (Max) @ Id, Vgs |
390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
4.2nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 6V |
Power - Max |
1.25W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Supplier Device Package |
SC-70-6 (SOT-363) |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SI1965DH-T1-E3