| Part Number | IRFSL11N50APBF |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1426pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IRFSL11N50A | Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | Details |
|
IRFSL11N50APBF | Vishay Siliconix | MOSFET N-CH 500V 11A TO-262 | Details |
 |
IRFSL17N20D | Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | Details |
|
IRFSL17N20DPBF | Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | Details |
|
IRFSL23N15D | Infineon Technologies | MOSFET N-CH 150V 23A TO-262 | Details |
|
IRFSL23N15DPBF | Infineon Technologies | MOSFET N-CH 150V 23A TO-262 | Details |
|
IRFSL23N20D | Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | Details |
|
IRFSL23N20D102P | Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | Details |
|
IRFSL3004PBF | Infineon Technologies | MOSFET N-CH 40V 195A TO262 | Details |
|
IRFSL3006PBF | Infineon Technologies | MOSFET N-CH 60V 195A TO262 | Details |
