IRF640STRRPBF - Vishay Siliconix

Part Number	IRF640STRRPBF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs	180 mOhm @ 11A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRF640	STMicroelectronics	MOSFET N-CH 200V 18A TO-220	Details
IRF640,127	NXP USA Inc.	MOSFET N-CH 200V 16A TO220AB	Details
IRF640A	FSC	IRF640A FSC To-220 New Original Stocks	Details
IRF640B	FSC	IRF640B FSC TO-220 New Original Stocks	Details
IRF640B_FP001	FAIRCHILDSEMICONDUCTORHKLTD	IRF640B_FP001 FAIRCHILDSEMICONDUCTORHKLTD SMD or Through Hole New Original Stocks	Details
IRF640B_FP01F080	FAIRCHILDSEMICONDUCTORHKLTD	IRF640B_FP01F080 FAIRCHILDSEMICONDUCTORHKLTD SMD or Through Hole New Original Stocks	Details
IRF640FP	STMicroelectronics	MOSFET N-CH 200V 18A TO-220FP	Details
IRF640L	Vishay Siliconix	MOSFET N-CH 200V 18A TO-262	Details
IRF640LPBF	Vishay Siliconix	MOSFET N-CH 200V 18A TO-262	Details
IRF640N	IOR	IRF640N IOR TO220 New Original Stocks	Details