IRF640,127

IRF640,127 - NXP USA Inc.

Part Number
IRF640,127
Manufacturer
NXP USA Inc.
Brief Description
MOSFET N-CH 200V 16A TO220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRF640,127 PDF online browsing
Datasheet PDF Download
IRF640,127.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3749 pcs
Reference Price
USD 0/pcs
Our Price
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IRF640,127 Detailed Description

Part Number IRF640,127
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 8A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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