DG636EN-T1-E4 Detailed Description
| Part Number |
DG636EN-T1-E4 |
| Part Status |
Last Time Buy |
| Switch Circuit |
SPDT |
| Multiplexer/Demultiplexer Circuit |
2:1 |
| Number of Circuits |
2 |
| On-State Resistance (Max) |
115 Ohm |
| Channel-to-Channel Matching (ΔRon) |
1 Ohm |
| Voltage - Supply, Single (V+) |
2.7 V ~ 12 V |
| Voltage - Supply, Dual (V±) |
±2.7 V ~ 5 V |
| Switch Time (Ton, Toff) (Max) |
60ns, 52ns |
| -3db Bandwidth |
610MHz |
| Charge Injection |
0.1pC |
| Channel Capacitance (CS(off), CD(off)) |
2.1pF, 4.2pF |
| Current - Leakage (IS(off)) (Max) |
100pA |
| Crosstalk |
-88dB @ 10MHz |
| Operating Temperature |
-40°C ~ 125°C (TA) |
| Package / Case |
16-WFQFN |
| Supplier Device Package |
16-miniQFN (1.8x2.6) |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR DG636EN-T1-E4
