TTC009,F(J - Toshiba Semiconductor and Storage

Part Number	TTC009,F(J
Part Status	Last Time Buy
Transistor Type	NPN
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V
Power - Max	2W
Frequency - Transition	150MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TTC0002(Q)	Toshiba Semiconductor and Storage	TRANS NPN 160V 18A TO-3PL	Details
TTC004B,Q	Toshiba Semiconductor and Storage	TRANS NPN 160V 1.5A TO126N	Details
TTC008(Q)	Toshiba Semiconductor and Storage	TRANS NPN 285V 1.5A PW MOLD2	Details
TTC009,F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	Details
TTC009,F(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	Details
TTC012(Q)	Toshiba Semiconductor and Storage	TRANS NPN 375V 2A PW MOLD2	Details
TTC05	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005JI	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005JS	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005KI	EXSHINE	Temperature Compensation/Sensing	Details