TTC0002(Q) - Toshiba Semiconductor and Storage

Part Number	TTC0002(Q)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	18A
Voltage - Collector Emitter Breakdown (Max)	160V
Vce Saturation (Max) @ Ib, Ic	2V @ 900mA, 9A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	180W
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(L)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TTC0002(Q)	Toshiba Semiconductor and Storage	TRANS NPN 160V 18A TO-3PL	Details
TTC004B,Q	Toshiba Semiconductor and Storage	TRANS NPN 160V 1.5A TO126N	Details
TTC008(Q)	Toshiba Semiconductor and Storage	TRANS NPN 285V 1.5A PW MOLD2	Details
TTC009,F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	Details
TTC009,F(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3	Details
TTC012(Q)	Toshiba Semiconductor and Storage	TRANS NPN 375V 2A PW MOLD2	Details
TTC05	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005JI	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005JS	EXSHINE	Temperature Compensation/Sensing	Details
TTC05005KI	EXSHINE	Temperature Compensation/Sensing	Details