TPHR8504PL,L1Q - Toshiba Semiconductor and Storage

Part Number	TPHR8504PL,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs	0.85 mOhm @ 50A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-