TPH4R10ANL,L1Q

TPH4R10ANL,L1Q - Toshiba Semiconductor and Storage

Part Number
TPH4R10ANL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH4R10ANL,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
242487 pcs
Reference Price
USD 0.679/pcs
Our Price
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TPH4R10ANL,L1Q Detailed Description

Part Number TPH4R10ANL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 92A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6.3nF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 67W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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