TPH2R506PL,L1Q

TPH2R506PL,L1Q - Toshiba Semiconductor and Storage

Part Number
TPH2R506PL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH2R506PL,L1Q PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
12500 pcs
Reference Price
USD 0.9796/pcs
Our Price
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TPH2R506PL,L1Q Detailed Description

Part Number TPH2R506PL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 134W (Tc)
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 30A, 4.5V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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