TK50E06K3A,S1X(S - Toshiba Semiconductor and Storage

Part Number	TK50E06K3A,S1X(S
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	50A
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 25A, 10V
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK50E06K3(S1SS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB	Details
TK50E06K3A,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 50A TO-220AB	Details
TK50E08K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 50A TO-220AB	Details