TK4A60DA(STA4,Q,M) - Toshiba Semiconductor and Storage

Part Number	TK4A60DA(STA4,Q,M)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 1.8A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK4A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 4A TO-220SIS	Details
TK4A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.5A TO220SIS	Details
TK4A60DB(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A TO-220SIS	Details