TK17E65W,S1X - Toshiba Semiconductor and Storage

Part Number	TK17E65W,S1X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	17.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 300V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Rds On (Max) @ Id, Vgs	200 mOhm @ 8.7A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-

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