TK12A50E,S4X - Toshiba Semiconductor and Storage

Part Number	TK12A50E,S4X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Rds On (Max) @ Id, Vgs	520 mOhm @ 6A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack, Isolated Tab
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK1202140-G1	SUNGMI	TK1202140-G1 SUNGMI BGA New Original Stocks	Details
TK1205800000G	Amphenol Anytek	TERM BLK 12P SIDE ENTRY 5MM PCB	Details
TK121	EXSHINE	Low TC Precision Radial-Lead Film Resistors	Details
TK12A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 12A TO-220SIS	Details
TK12A50D	TOSHIBA	TK12A50D TOSHIBA TO-220.. New Original Stocks	Details
TK12A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 12A TO-220SIS	Details
TK12A50E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 500V TO220SIS	Details
TK12A50E,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 500V TO220SIS	Details
TK12A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS	Details
TK12A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 12A TO-220SIS	Details