TK10V60W,LVQ - Toshiba Semiconductor and Storage

Part Number	TK10V60W,LVQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 300V
Vgs (Max)	±30V
FET Feature	Super Junction
Power Dissipation (Max)	88.3W (Tc)
Rds On (Max) @ Id, Vgs	380 mOhm @ 4.9A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (8x8)
Package / Case	4-VSFN Exposed Pad
Weight	-
Country of Origin	-

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