TJ10S04M3L(T6L1,NQ Detailed Description
Part Number |
TJ10S04M3L(T6L1,NQ |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
10A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
6V, 10V |
Vgs(th) (Max) @ Id |
3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
930pF @ 10V |
Vgs (Max) |
+10V, -20V |
FET Feature |
- |
Power Dissipation (Max) |
27W (Tc) |
Rds On (Max) @ Id, Vgs |
44 mOhm @ 5A, 10V |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DPAK+ |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight |
- |
Country of Origin |
- |
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