TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ - Toshiba Semiconductor and Storage

Part Number
TJ10S04M3L(T6L1,NQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CH 40V 10A DPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TJ10S04M3L(T6L1,NQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
47003 pcs
Reference Price
USD 0.539/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ Detailed Description

Part Number TJ10S04M3L(T6L1,NQ
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 10V
Vgs (Max) +10V, -20V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Rds On (Max) @ Id, Vgs 44 mOhm @ 5A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

RELATED PRODUCTS FOR TJ10S04M3L(T6L1,NQ