SSM6H19NU,LF

SSM6H19NU,LF - Toshiba Semiconductor and Storage

Part Number
SSM6H19NU,LF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 40V 2A 6UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SSM6H19NU,LF PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
229155 pcs
Reference Price
USD 0.1107/pcs
Our Price
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SSM6H19NU,LF Detailed Description

Part Number SSM6H19NU,LF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 8V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 185 mOhm @ 1A, 8V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad
Weight -
Country of Origin -

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