SSM3K2615TU,LF - Toshiba Semiconductor and Storage

Part Number	SSM3K2615TU,LF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Rds On (Max) @ Id, Vgs	300 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 10V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UFM
Package / Case	3-SMD, Flat Leads
Weight	-
Country of Origin	-

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