| Part Number | RN1911FETE85LF |
|---|---|
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
RN1910,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W US6 | Details |
 |
RN1910AFS | TOSHIBA | RN1910AFS TOSHIBA SOT963 New Original Stocks | Details |
|
RN1910FE(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
|
RN1910FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
|
RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W US6 | Details |
|
RN1911FE | TOSHIBA | RN1911FE TOSHIBA ES6 New Original Stocks | Details |
|
RN1911FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
