MT3S113P(TE12L,F)

MT3S113P(TE12L,F) - Toshiba Semiconductor and Storage

Part Number
MT3S113P(TE12L,F)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MT3S113P(TE12L,F) PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - RF
Delivery Time
1 Day
Date Code
New
Stock Quantity
389242 pcs
Reference Price
USD 0.423/pcs
Our Price
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MT3S113P(TE12L,F) Detailed Description

Part Number MT3S113P(TE12L,F)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 7.7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 10.5dB
Power - Max 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
Weight -
Country of Origin -

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