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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays › HN4C51J(TE85L,F)
HN4C51J(TE85L,F)

HN4C51J(TE85L,F) - Toshiba Semiconductor and Storage

Part Number
HN4C51J(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS 2NPN 120V 0.1A SMV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HN4C51J(TE85L,F) PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
4215 pcs
Reference Price
USD 0/pcs
Our Price
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HN4C51J(TE85L,F) Detailed Description

Part Number HN4C51J(TE85L,F)
Part Status Active
Transistor Type 2 NPN (Dual) Common Base
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
Weight -
Country of Origin -

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HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SMV Details