GT8G133(TE12L,Q)

GT8G133(TE12L,Q) - Toshiba Semiconductor and Storage

Part Number
GT8G133(TE12L,Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
IGBT 400V 600MW 8TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GT8G133(TE12L,Q) PDF online browsing
Datasheet PDF Download
GT8G133(TE12L,Q).pdf
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4116 pcs
Reference Price
USD 0/pcs
Our Price
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GT8G133(TE12L,Q) Detailed Description

Part Number GT8G133(TE12L,Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 150A
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 150A
Power - Max 600mW
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 1.7µs/2µs
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Weight -
Country of Origin -

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