2SK2009TE85LF - Toshiba Semiconductor and Storage

Part Number	2SK2009TE85LF
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 3V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Rds On (Max) @ Id, Vgs	2 Ohm @ 50MA, 2.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

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