2SA1382,T6MIBF(J

2SA1382,T6MIBF(J - Toshiba Semiconductor and Storage

Part Number
2SA1382,T6MIBF(J
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PNP 2A 50V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SA1382,T6MIBF(J PDF online browsing
Datasheet PDF Download
2SA1382,T6MIBF(J.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3644 pcs
Reference Price
USD 0/pcs
Our Price
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2SA1382,T6MIBF(J Detailed Description

Part Number 2SA1382,T6MIBF(J
Part Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 33mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V
Power - Max 900mW
Frequency - Transition 110MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Weight -
Country of Origin -

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