2SA1013-O,T6MIBF(J - Toshiba Semiconductor and Storage

Part Number	2SA1013-O,T6MIBF(J
Part Status	Last Time Buy
Transistor Type	PNP
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	160V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 200mA, 5V
Power - Max	900mW
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	TO-92L
Weight	-
Country of Origin	-

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