CSD25211W1015

CSD25211W1015 - Texas Instruments

Part Number
CSD25211W1015
Manufacturer
Texas Instruments
Brief Description
MOSFET P-CH 20V 3.2A 6DSBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
CSD25211W1015 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
150717 pcs
Reference Price
USD 0.1708/pcs
Our Price
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CSD25211W1015 Detailed Description

Part Number CSD25211W1015
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 10V
Vgs (Max) -6V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 33 mOhm @ 1.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
Weight -
Country of Origin -

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