CSD25211W1015 Detailed Description
Part Number |
CSD25211W1015 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
3.2A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
2.5V, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
4.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
570pF @ 10V |
Vgs (Max) |
-6V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Rds On (Max) @ Id, Vgs |
33 mOhm @ 1.5A, 4.5V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-DSBGA (1x1.5) |
Package / Case |
6-UFBGA, DSBGA |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR CSD25211W1015