TSM2N7000KCT A3G - Taiwan Semiconductor Corporation

Part Number	TSM2N7000KCT A3G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7.32pF @ 25V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight	-
Country of Origin	-

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TSM2N7000KCT A3G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 300MA TO92	Details
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