TSM2N60SCW RPG

TSM2N60SCW RPG - Taiwan Semiconductor Corporation

Part Number
TSM2N60SCW RPG
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET N-CH 600V 600MA SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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TSM2N60SCW RPG PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
684445 pcs
Reference Price
USD 0.24056/pcs
Our Price
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TSM2N60SCW RPG Detailed Description

Part Number TSM2N60SCW RPG
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5 Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Weight -
Country of Origin -

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