TSM100N06CZ C0G - Taiwan Semiconductor Corporation

Part Number	TSM100N06CZ C0G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4382pF @ 30V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TSM10-9.5-520-TR	E-Switch	SWITCH TACTILE	Details
TSM1001DLM	ST	TSM1001DLM ST DIP16 New Original Stocks	Details
TSM1001DLMD	ST	TSM1001DLMD ST SOP16 New Original Stocks	Details
TSM1002DS	ST	TSM1002DS ST SOP16 New Original Stocks	Details
TSM100IDT	STMicroelectronics	IC AMPLIFIER SINGLE OP 8 SOIC	Details
TSM100N06CZ C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 100A TO220	Details
TSM1011AID	STMicroelectronics	IC CTRLR CHRGR/ADAPT 8-SOIC	Details
TSM1011AIDT	STMicroelectronics	IC CONTROLLER CC/CV SPMS 8SOIC	Details
TSM1011AIST	STMicroelectronics	IC CTRLR CC/CV SMPS MINI 8-MSOP	Details
TSM1011ID	STMicroelectronics	IC CTRLR CHRGR/ADAPT 8-SOIC	Details