S3M V6G - Taiwan Semiconductor Corporation

Part Number	S3M V6G
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	-
Current - Average Rectified (Io)	3A
Voltage - Forward (Vf) (Max) @ If	-
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.5µs
Current - Reverse Leakage @ Vr	10µA @ 1000V
Capacitance @ Vr, F	60pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AB, SMC
Supplier Device Package	DO-214AB (SMC)
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
S3M	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 3A SMC	Details
S3M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Details
S3M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB	Details
S3M V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Details
S3M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB	Details
S3M-13	Diodes Incorporated	DIODE GEN PURP 1KV 3A SMC	Details
S3M-13-F	Diodes Incorporated	DIODE GEN PURP 1KV 3A SMC	Details
S3M-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO214AB	Details
S3M-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO214AB	Details
S3M-M3/57T	Vishay Semiconductor Diodes Division	DIODE GPP 3A 1000V DO-214AB	Details