S1B M2G - Taiwan Semiconductor Corporation

Part Number	S1B M2G
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.5µs
Current - Reverse Leakage @ Vr	1µA @ 100V
Capacitance @ Vr, F	12pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
S1B	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 1A SMA	Details
S1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Details
S1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Details
S1B-13	Diodes Incorporated	DIODE GEN PURP 100V 1A SMA	Details
S1B-13-F	Diodes Incorporated	DIODE GEN PURP 100V 1A SMA	Details
S1B-13-G	DIODES	S1B-13-G DIODES SMA New Original Stocks	Details
S1B-E3	VISHAY	S1B-E3 VISHAY DO214A.. New Original Stocks	Details
S1B-E3/51T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	Details
S1B-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	Details
S1B-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	Details