STI11NM60ND Detailed Description
Part Number |
STI11NM60ND |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600V |
Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 50V |
Vgs (Max) |
±25V |
FET Feature |
- |
Power Dissipation (Max) |
90W (Tc) |
Rds On (Max) @ Id, Vgs |
450 mOhm @ 5A, 10V |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR STI11NM60ND