SCT10N120

SCT10N120 - STMicroelectronics

Part Number
SCT10N120
Manufacturer
STMicroelectronics
Brief Description
MOSFET N-CH 1.2KV TO247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SCT10N120 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2170 pcs
Reference Price
USD 11.87/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SCT10N120

SCT10N120 Detailed Description

Part Number SCT10N120
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 690 mOhm @ 6A, 20V
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR SCT10N120