| Part Number | 1N5616C.TR |
|---|---|
| Part Status | Active |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 500nA @ 400V |
| Capacitance @ Vr, F | 23pF @ 5V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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1N5610 | Microsemi Corporation | TVS DIODE 30.5VWM 47.6VC G-PKG | Details |
 |
1N5611 | Microsemi Corporation | TVS DIODE | Details |
|
1N5613 | Microsemi Corporation | TVS DIODE C-BODY | Details |
 |
1N5614 | Microsemi Corporation | DIODE GEN PURP 200V 1A AXIAL | Details |
 |
1N5614GP | VISHAY | 1N5614GP VISHAY DO-15 New Original Stocks | Details |
 |
1N5614GP-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | Details |
|
1N5614GP-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | Details |
|
1N5614GPHE3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | Details |
 |
1N5614US | Microsemi Corporation | DIODE GEN PURP 200V 1A D5A | Details |
|
1N5615 | Microsemi Corporation | DIODE GEN PURP 200V 1A AXIAL | Details |
