SCT3022ALGC11 - Rohm Semiconductor

Part Number	SCT3022ALGC11
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs(th) (Max) @ Id	5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs	133nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds	2208pF @ 500V
Vgs (Max)	+22V, -4V
FET Feature	-
Power Dissipation (Max)	339W (Tc)
Rds On (Max) @ Id, Vgs	28.6 mOhm @ 36A, 18V
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SCT300-300	Panduit Corp	CONN T-SPLICE TAP 300 MCM CRIMP	Details
SCT3017ALHRC11	Rohm Semiconductor	AUTOMOTIVE GRADE N-CHANNEL SIC P	Details
SCT3022ALGC11	Rohm Semiconductor	MOSFET NCH 650V 93A TO247N	Details
SCT3022ALHRC11	Rohm Semiconductor	AUTOMOTIVE GRADE N-CHANNEL SIC P	Details
SCT3022KLGC11	Rohm Semiconductor	SCT3022KL IS AN SIC SILICON CAR	Details
SCT3022KLHRC11	Rohm Semiconductor	AUTOMOTIVE GRADE N-CHANNEL SIC P	Details
SCT3030ALGC11	Rohm Semiconductor	MOSFET NCH 650V 70A TO247N	Details
SCT3030ALHRC11	Rohm Semiconductor	AUTOMOTIVE GRADE N-CHANNEL SIC P	Details
SCT3030KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 72A TO247N	Details
SCT3030KLHRC11	Rohm Semiconductor	AUTOMOTIVE GRADE N-CHANNEL SIC P	Details