Part Number | SCT2080KEC |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 4V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs | 106nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 800V |
Vgs (Max) | +22V, -6V |
FET Feature | - |
Power Dissipation (Max) | 262W (Tc) |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 10A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Weight | - |
Country of Origin | - |