RUS100N02TB - Rohm Semiconductor

Part Number	RUS100N02TB
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 10V
Vgs (Max)	±10V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	12 mOhm @ 10A, 4.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-