RSJ10HN06TL - Rohm Semiconductor

Part Number	RSJ10HN06TL
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	202nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 50A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS
Package / Case	SC-83
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	RSJ10HN06TL	Rohm Semiconductor	MOSFET N-CH 60V 100A LPTS	Details
	RSJ151P10TL	Rohm Semiconductor	MOSFET P-CH 100V 15A SC83	Details