RSE002P03TL - Rohm Semiconductor

Part Number	RSE002P03TL
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 200mA, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	EMT3
Package / Case	SC-75, SOT-416
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RSE002N06	rohm	RSE002N06 rohm SOT423 New Original Stocks	Details
RSE002N06TL	Rohm Semiconductor	MOSFET N-CH 60V 0.25A EMT3	Details
RSE002P03	ROHM	4V Drive Pch MOSFET	Details
RSE002P03TL	Rohm Semiconductor	MOSFET P-CH 30V 200MA SOT416	Details