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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › RGTH00TS65GC11
RGTH00TS65GC11

RGTH00TS65GC11 - Rohm Semiconductor

Part Number
RGTH00TS65GC11
Manufacturer
Rohm Semiconductor
Brief Description
IGBT 650V 85A 277W TO-247N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RGTH00TS65GC11 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
812 pcs
Reference Price
USD 3.95/pcs
Our Price
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RGTH00TS65GC11 Detailed Description

Part Number RGTH00TS65GC11
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 85A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 277W
Switching Energy -
Input Type Standard
Gate Charge 94nC
Td (on/off) @ 25°C 39ns/143ns
Test Condition 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Weight -
Country of Origin -

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RGTH00TS65DGC11 RGTH00TS65DGC11 Rohm Semiconductor IGBT 650V 85A 277W TO-247N Details
RGTH00TS65GC11 RGTH00TS65GC11 Rohm Semiconductor IGBT 650V 85A 277W TO-247N Details