BSM300D12P2E001 - Rohm Semiconductor

Part Number	BSM300D12P2E001
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	300A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	35000pF @ 10V
Power - Max	1875W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BSM300D12P2E001	Rohm Semiconductor	MOSFET 2N-CH 1200V 300A	Details
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BSM300GA120DLCSHOSA1	Infineon Technologies	IGBT 2 MED POWER 62MM-2	Details
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BSM300GA170DLC	EUPEC	BSM300GA170DLC EUPEC Standa.. New Original Stocks	Details
BSM300GA170DLCHOSA1	Infineon Technologies	IGBT 2 MED POWER 62MM-2	Details
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