N0439N-S19-AY - Renesas Electronics America

Part Number	N0439N-S19-AY
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5850pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 45A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Weight	-
Country of Origin	-