H5N2522LSTL-E

H5N2522LSTL-E - Renesas Electronics America

Part Number
H5N2522LSTL-E
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH 250V 20A LDPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
H5N2522LSTL-E PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
18887 pcs
Reference Price
USD 1.4/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for H5N2522LSTL-E

H5N2522LSTL-E Detailed Description

Part Number H5N2522LSTL-E
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 10A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-LDPAK
Package / Case SC-83
Weight -
Country of Origin -

RELATED PRODUCTS FOR H5N2522LSTL-E