NVATS5A304PLZT4G - ON Semiconductor

Part Number	NVATS5A304PLZT4G
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	108W (Tc)
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ATPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

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NVATS5A304PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details