NVATS5A106PLZT4G - ON Semiconductor

Part Number	NVATS5A106PLZT4G
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	33A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Rds On (Max) @ Id, Vgs	25 mOhm @ 15A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ATPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NVATS5A106PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A107PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A108PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A112PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A113PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A114PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A302PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details
NVATS5A304PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK	Details