NVATS4A101PZT4G

NVATS4A101PZT4G - ON Semiconductor

Part Number
NVATS4A101PZT4G
Manufacturer
ON Semiconductor
Brief Description
MOSFET P-CH 30V DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NVATS4A101PZT4G PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
71514 pcs
Reference Price
USD 0.3622/pcs
Our Price
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NVATS4A101PZT4G Detailed Description

Part Number NVATS4A101PZT4G
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ATPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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