NTD12N10-1G Detailed Description
Part Number |
NTD12N10-1G |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
12A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1.28W (Ta), 56.6W (Tc) |
Rds On (Max) @ Id, Vgs |
165 mOhm @ 6A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I-Pak |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Weight |
- |
Country of Origin |
- |
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