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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › NGTD23T120F2WP
NGTD23T120F2WP

NGTD23T120F2WP - ON Semiconductor

Part Number
NGTD23T120F2WP
Manufacturer
ON Semiconductor
Brief Description
IGBT TRENCH FIELD STOP 1200V DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NGTD23T120F2WP PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
8743 pcs
Reference Price
USD 2.9689/pcs
Our Price
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NGTD23T120F2WP Detailed Description

Part Number NGTD23T120F2WP
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

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