FDP020N06B-F102 - ON Semiconductor

Part Number	FDP020N06B-F102
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	268nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20930pF @ 30V
FET Feature	-
Power Dissipation (Max)	333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FDP020N06B-F102	ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3	Details
FDP020N06B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3	Details
FDP023N08B-F102	ON Semiconductor	MOSFET N-CH 75V 120A TO-220-3	Details
FDP023N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 75V 120A TO-220-3	Details
FDP025N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO-220	Details
FDP027N08B	Fairchild/ON Semiconductor	MOSFET N-CH 80V 223A TO-220-3	Details
FDP027N08B-F102	ON Semiconductor	MOSFET N-CH 80V 120A TO-220-3	Details
FDP027N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 80V 120A TO-220-3	Details