FCPF11N60_G

FCPF11N60_G - ON Semiconductor

Part Number
FCPF11N60_G
Manufacturer
ON Semiconductor
Brief Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FCPF11N60_G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
41612 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for FCPF11N60_G

FCPF11N60_G Detailed Description

Part Number FCPF11N60_G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

RELATED PRODUCTS FOR FCPF11N60_G